Control Leakage In Active Mode

Nov. 5, 2007
Control of subthreshold leakage in standby mode is best accomplished with power-shutoff switches. But what can be done when the chip is fully awake and active? One approach is gate-length biasing, which is a way to achieve leakage reduction in a way t

Control of subthreshold leakage in standby mode is best accomplished with power-shutoff switches. But what can be done when the chip is fully awake and active?

One approach is gate-length biasing, which is a way to achieve leakage reduction in a way that will minimally disrupt performance. The effects of gate-length biasing, long known to analog designers, are multifold. While lengthening a given gate can exponentially reduce leakage as well as process variability, it also linearly reduces drive strength.

So in the view of Blaze DFM, whose Blaze MO tool performs gate-length biasing during application of optical-proximity correction, the answer lies in applying the technique as judiciously as possible. "In looking at the design, we know which are the critical paths and which are not," says Dave Reed, vice president of marketing and business development (and a founder) of Blaze DFM.

"Applying gate biasing to devices in timing-critical paths impacts the overall design performance, so we don't modify these," Reed says. "We want those at full speed. The ones that are in non-critical paths can be slowed without impacting performance."

Blaze MO can also perform voltage-threshold reassignment, using a similar approach to the one for gate-length biasing. "For non-critical paths, we can switch from low-VT to high-VT cells," says Reed. Low-VT cells are very fast but also very leaky, while high-VT cells are slower but leak less.
About the Author

David Maliniak | MWRF Executive Editor

In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy. David earned a B.A. in journalism at New York University.

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