EE Product News

FETs Claim Low Switching Losses

This new family of low capacitance, low gate charge MOSFETs are claimed to provide extremely low switching losses and gate charge. Designated as the Power MOS VI series, the devices are made using the company's patented metal on polysilicon gate structure, which is said to keep internal chip gate resistances at a lower magnitude than comparable industry-standard polysilicon gate devices. Other features include a breakdown voltage of 500V, an on-resistance of from 50 to 200 milliohms, a drain current from 26A to 77A, and low gate charge. Price ranges from $8.15 to $54.42 each/1000, depending on model.


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