EE Product News

FETs Deliver Low Noise, High Gain

Designed for first, second and third stage LNA applications in DBS receivers and other X and Ku Band receiver designs is a pair of heterojunction FETs that deliver low noise and high gain specifications. With a noise figure of just 0.35 dB at 12 GHz, the NE3210S01 FET delivers top performance for a first stage LNA. The NE4210S01, in turn, is designed to deliver excellent performance as the second or third stage device. Both devices are housed in a plastic surface-mount package that's available on tape-and-reel for high-volume manufacturing. In lots of 100,000, the NE3210S01 heterojunction FET is priced at $0.75 each and the NE4210S01 costs $0.71 each.


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