Field-Stop Trench IGBTs Curtail Conduction Losses

Field-Stop Trench IGBTs Curtail Conduction Losses

In a move to improve efficiency and reliability in hard-switching industrial applications, Fairchild Semiconductor developed a series of 1200-V field-stop trench insulated-gate bipolar transistors (IGBTs) that minimize conduction losses. The devices’ feature a VCE(SAT) rating of 1.8 V at rated collector current, which the company says is demonstrably lower than previous fast-switching non-punch-through (NPT) IGBTs. In terms of switching losses, EOFF drops to 27 µJ/A. A co-packed diode is optimized for fast switching. The series is 100% tested for clamped inductive switching at four times the rated current to ensure a larger safe operating area (SOA). Other features are high input impedance and a maximum junction temperature of 175°C. The IGBTs come in T0247 packages with 20-mm lead length. Specific industrial applications include solar inverters, uninterruptible power supplies (UPSs), and welders.


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