For power conversion and motion control applications, these gallium arsenide (GaAs) power Schottky rectifiers are said to be more attractive than silicon for high-frequency applications due to the GaAs crystal's higher breakdown voltage, higher electron mobility, and higher operating temperature. The Schottkys are capable of switching speeds up to 2 MHz and are practically temperature independent. These attributes reportedly dramatically reduce switching losses found with silicon devices in high-frequency applications.
Company: IXYS CORP.
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