Gate Driver Trims Switching Losses

For ultra fast switching of power MOSFET and IGBT loads, the ZXGD3005E6 10A gate driver relies on an emitter follower configuration to deliver propagation delay times of less than 10 ns and rise and fall times less than 20 ns.
Jan. 20, 2011
2 min read

For ultra fast switching of power MOSFET and IGBT loads, the ZXGD3005E6 10A gate driver relies on an emitter follower configuration to deliver propagation delay times of less than 10 ns and rise and fall times less than 20 ns. Providing separate source and sink outputs, the devices enables independent control of the rise and fall times, allowing users to achieve their preferred switching characteristics.  A supply voltage range of 25V allows full enhancement of target MOSFET or IGBT to minimize on-state losses and permits +15V to -5V gate drive voltages to prevent false triggering of IGBTs. Pricing is $0.22 each/1,000. DIODES INC., Dallas, TX. (972) 385-2810.

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