Skip navigation

High-Efficiency Half-Bridge MOSFETs Eye RF Generators

Aliso Viejo, Calif., USA: Microsemi claims the DRF1400 is the first in its family to deliver efficiency greater than 92% at 1kW. It integrates RF gate drivers, MOSFETs, and bypass capacitors in a half-bridge topology. Integrating the RF drivers simplifies driver stage design, allowing for simple logic signals at the input. The internal bypass capacitors promise reduced parasitic capacitance and inductance. High-breakdown-voltage (500V) MOSFETs are used, enabling higher power output per half bridge.

The DRF1400 also features a Schmitt trigger input, Kelvin signal ground, anti-ring function, and invert and non-invert select pins. Housed in a high-thermal-performance proprietary package, it can deliver up to 1.4kW of power.

The device will find homes in RF generators for industrial, scientific, and medical (ISM) applications. Engineering samples are available now.
Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.