EE Product News

High-Voltage MOSFETs Bring Size Reduction

A high-voltage MOSFET offers a size reduction of 40% compared with currently available devices. The device is intended for implantable cardio defibrillator applications and was designed jointly by Microsemi Corp. and Advanced Power Technology, Bend, Ore. The MSAFA1N100D MOSFET is much smaller than earlier implantable MOSFETs but provides equivalent electrical performance. In addition to meeting required specifications of 1 kV and 13.5 ohms at body temperature, the device gives designers the ability to reduce battery drain with a gate charge specification of just 20 nC.

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