HV Superjunction Technology Shrinks MOSFET On-Resistance

HV Superjunction Technology Shrinks MOSFET On-Resistance

A 650-V superjunction MOSFET technology introduced by Infineon offers an RDS(on) of 19 mΩ in a TO-247 package and 45 mΩ in TO-220 and D2PAK packages. The fast switching performance of the CoolMOS C7 pushes switching frequencies over 100 kHz while achieving titanium levels of efficiency in server power-factor-correction (PFC) stages. This reduces the space requirements for the passive components, thus enabling higher power density. Reduced energy in the output capacitance (EOSS), as well as the low gate charge (QG), enhances efficiency at light load conditions. C7 is optimized for hard switching topologies such as continuous-conduction-mode power factor correction (CCM PFC), two transistor forward (TTF), and solar boost.


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