Ku-Band FET Boasts Of 20W At 14.5 GHz Rating

Aug. 1, 1999
With an enhanced internal matching network that allows operation at 14 to 14.5 GHz, TIM1414-20 GaAs FET is said to offer superior power, gain and efficiency compared with traveling wave tubes and other GaAs devices. With a smaller high-power amplifier

With an enhanced internal matching network that allows operation at 14 to 14.5 GHz, TIM1414-20 GaAs FET is said to offer superior power, gain and efficiency compared with traveling wave tubes and other GaAs devices. With a smaller high-power amplifier (HPA) size, the device allows designs to be simplified and total system costs lowered by reducing parts count. Based on a pseudo-morphic high-electron mobility transistor process technology, this 20W Ku-band device targets solid-state power amplifiers for 14 to 14.5 GHz satellite base station communications transmitters and very small aperture terminals.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!