EE Product News

N-Channel MOSFET Sports 4 milliohm RDS(ON)

Maximum on-resistance of just 4 milliohm is the hallmark of the Si4430DY, an N-channel MOSFET that comes in an SO-8 package. In building this Little Foot device, the firm replaced the bond wires traditionally found in power MOSFET packages with a direct connection between the silicon die and the copper lead frame. The result is a doubling of the number of leads that are directly connected to the die, which considerably improves thermal performance.The device handles up to 28A and will dissipate up to 3.75W, said to be nearly a two-fold improvement over earlier power MOSFETs in a SO-8 package.


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