Members of the ChipFET Power MOSFET series occupy a footprint measuring 3.05 by 1.80 mm. The p-channel devices are ESD-protected in leadless packages. The ChipFETs, designed to minimize conduction losses, feature low on-resistance.
RDS(ON) at a 4.5-V gate drive is 45 and 62 mΩ, respectively, for the -20-V Si5461EDC and Si5463EDC. For the -12-V Si5465EDC, this value is just 37 mΩ. All three de-vices are rated for operation at 2.5 and 1.8 V. Maximum current handling ranges from -5.1 to -7.0 A, depending on gate-source voltage. 5000-V ESD protection helps to increase manufacturing yields. Typical applications include load switching, battery-charger switching, and power-amplifier switching in cell phones, PDAs, and other portable devices.
For larger orders, the Si5461EDC, Si5463EDC, and Si5465EDC are available with lead times of six to eight weeks. Pricing begins at $0.32 for 100,000-piece quantities.
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