EE Product News

Power FETs Offer Reduced Gate Charge Design

Offering two n-channel MOSFETs in a single SO-8 package, Si4824DY PWM-optimized Littlefoot devices offer on-resistance of 17.5 milliohms for the first MOSFET and 40 milliohms for the second. Typical gate charge is 12 nC for one MOSFET and 31 nC for the other. These reduced Qg ratings ensure that power conversion efficiency is maximized across the full voltage range of the circuit. Two other single n-channel power MOSFETs are also available. On-resistance is 13.5 milliohms for the Si4820DY and 10 milliohms for the Si4822DY in SO-8 packages.


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