EE Product News

Power MOSFETs Achieve Ultra-Low Power Dissipation

By using an enhanced version of the firm’s TrenchMOS process technology, the SiliconMAX MOSFETs offer designers the power dissipation and switching-speed advantages of TrenchMOS while reducing the switching losses by as much as half that of existing 25V to 200V DMOS power MOSFETs. The devices are suited for products requiring a low RDS(ON), including dc-to-dc converters and load-switching tasks.The power FETs offer a lower RDS(ON) rating in the same-sized package or allow for use of a smaller device with the same rating. The 100V SiliconMAX device in a TO-220 package achieves a 15-milliohms maximum RDS(ON) figure.


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