EE Product News

QFETs Fortify Ballast Applications

Intended for use in compact ballast applications, the FQNL1N50B and FQNL2N50B N-channel MOSFETs employing QFET technology promise improved performance and lower cost than comparable I-PAK MOSFETs. The devices are also reported as being the first TO-92L packaged devices in the industry designed specifically for the compact ballast market. The FQNL1N50B is rated at 500V and 0.27A and exhibits an on resistance of 9½ and the FQNL2N50B is rated at 500V and 0.35A with an on resistance of 5.3½. Both parts are rated at PD=1.5W. Pricing for the FQNL1N50B and FQNL2N50B is $0.30 and $0.35, respectively, each/1,000. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (888) 522-5372.


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