EE Product News

RF Power Transistor Claims To Be First 2.5 GHz LDMOS

Introduced as the industry's first 2.5-GHz, LDMOS RF power transistor, the PTF102006 is a 25-W, 11-dB gain device with a drain-source breakdown voltage of 65V and a load mismatch tolerance of 10:1. Incorporating the company's GOLDMOS technology, the device features all-gold metalization of its package, which, it is claimed, provides superior performance at higher frequencies.
Offered in the company's 20237 package, the device measures only 9.7 mm x 26.2 mm, including flanges.

Company: ERICSSON INC. - Microelectronics

Product URL: Click here for more information

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