PCIM 2012 Nuremberg: Richardson RFPD unveiled eight devices representing the new gallium-nitride (GaN) on silicon-carbide (SiC) family of power transistors from M/A-COM Technology Solutions. Targeted applications include the L- and S-Band from 960MHz to 3500MHz.
The GaN-on-SiC transistors provide rugged 50V operation with greater than 175W breakdown voltage, translating into reliable and stable operation in extreme mismatched load conditions. The devices come in thermally enhanced Cu/Mo/Cu flanged ceramic packages, and are EAR99-compliant.
Features vary for the specific models:
MAGX-000912-125L00 and MAGX-000912-250L00
- 969MHz to 1215MHz frequency range
- GaN-on-SiC HEMT 125W and 250W pulsed power transistors
- Internally matched
- Common source configuration
- Power-added efficiency of 60%
- Developed for avionics applications, such as Mode-S, TCAS, JTIDS, DME and TACAN
MAGX-001214-125L00 and MAGX-001214-250L00:
- 1200MHz to 1400MHz Frequency Range
- GaN-on-SiC HEMT 125W and 250W pulsed power transistors
- Operates effectively even in extreme mismatch load conditions
- Developed for L-Band radar applications
MAGX-001220-100L00:
- 1200MHz to 2000MHz frequency range
- GaN-on-SiC HEMT 100W power transistor
- High gain, efficiency, and superior ruggedness over a wide bandwidth
- Drain efficiency of 55%
- Withstands 10:1 load mismatches
MAGX-002731-030L00 and MAGX-002731-100L00:
- 2700MHz to 3100MHz frequency range
- GaN on SiC HEMT 30W and 100W pulsed power transistors
- High performance with extreme ruggedness
- Breakdown performance excels up to 175V
- Developed for civilian and military pulsed radar applications