SiC Devices Lose Little

Jan. 24, 2012
Touting low loss operation, the RJQ6020DPM, RJQ6021DPM, and RJQ6022DPM silicon carbide (SiC) compound power devices incorporate multiple SiC diodes and multiple power transistors in a single package.

Touting low loss operation, the RJQ6020DPM, RJQ6021DPM, and RJQ6022DPM silicon carbide (SiC) compound power devices incorporate multiple SiC diodes and multiple power transistors in a single package. Each specifies a voltage tolerance of 600V. The RJQ6020DPM device integrates an SiC-SBD and two high-voltage power MOSFETs. Reverse recovery time is 15 ns and on-resistance is 100 mΩ. The RJQ6021DPM device combines an SiC-SBD and two IGBTs required for PFC applications. Reverse recovery time is only 15 ns and the ultra-thin-wafer IGBTs require an on-voltage of 1.5V. The RJQ6022DPM device combines two SiC-SBDs and two IGBTs required for half-bridge circuits in inverters. Reverse recovery time is 15 ns. The ultra-thin-wafer IGBTs deliver an on-voltage of 1.5 V and short circuit time of 6 μs. Samples of the SiC compound power devices are scheduled to begin in February, priced at $10 each. RENESAS TECHNOLOGY AMERICA INC., San Jose, CA. (408) 382-7407.

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