A new 1200 V SiC MOSFET product family from Microsemi seeks to help customers develop higher frequency system designs that are lighter, smaller and more reliable. The innovative new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical, such as solar inverters, electric vehicles, welding and medical devices. The company’s patented technology boasts, best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand. The devices are rated at 80 mΩ and 50 mΩ and provide development flexibility in offering both industry standard TO-247 and SOT-227 packages. The SiC MOSFETs are integrated into Microsemi's new MOSFET power modules and are also complimented by a complete product line of SiC Schottky Diodes, including a new 1700 V model APT10SCE170B. The 1200 V SiC MOSFETs are available now in TO-247 packages, the APT40SM120B (80 mΩ, 40 A) and the APT50SM120B (50 mΩ, 50 A) with the SOT-227 packages, the APT40SM120J (80 mΩ, 40 A) and the APT50SM120J (50 mΩ, 50 A) scheduled for release in July 2014.