Electronic Design

Silicon Carbide MOSFET Drives Up Efficiency

Cree extends its Z-FET family with a lower-current 1.2-kV silicon carbide (SiC) MOSFET, designed to replace IGBTs in power inverter designs between 3 kW and 10 kW. The SiC MOSFET is rated for 12A at its operating temperature of +100°C and delivers blocking voltages up to 1.2 kV with a typical on-state resistance of 160 m? at +25°C. On resistance remains below 200 m? across its entire operating temperature range. This reduces switching losses by as much as 50%, thereby increasing system efficiencies up to 2% while operating at two to three times the switching frequencies when compared to the best silicon IGBTs. CREE INC., Durham, NC. (919) 313-5300.

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.