EE Product News

Tiny Dual Power MOSFETs Are PWM-Optimized

A complementary n- and p-channel MOSFET half-bridge in a TSOP-6 package is one of three new PWM-optimized Little Foot devices. The Si3850DV is claimed as the first dual n- and p-channel device in so small a package. It's specifically aimed at high-efficiency dc/dc converter applications with outputs below 1W.One Si3850DV device can replace the two SOT-23 MOSFETs used to convert battery power to logic-level voltages in digital cameras, PCS and cellular phones, camcorders and bar-code scanners. Maximum gate charge is just 2.5 nC. On-resistance is 0.5 ohms for the n-channel and 1 ohm for the p-channel component.


Product URL: Click here for more information

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.