Electronic Design
Tiny Power MOSFET Boasts Low On Resistance

Tiny Power MOSFET Boasts Low On Resistance

The 8-V SiB437EDKT TrenchFET power MOSFET from Vishay Intertechnology offers the industry’s lowest on resistance for a p-channel device with a 1.6- by 1.6-mm footprint and a profile under 0.8 mm, according to the company. Vishay also says that the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.

The MOSFET is designed for load switching in smart phones, MP3 players, portable media players, digital cameras, e-readers, tablets, and other handheld devices. Combined with its compact footprint, the 0.65-mm maximum profile of its thermally enhanced SC-75 package enables smaller and slimmer end products. Its low on resistance also leads to lower conduction losses, saving power and maximizing battery runtimes.

With its 1.5- and 1.2-V on-resistance ratings, the SiB437EDKT can work with the lower-voltage gate drives and lower bus voltages common to handheld devices with the space and cost of level-shifting circuitry. Vishay says that the MOSFET is particularly useful when the battery charge in a handheld device is low and needs to consume as little power as possible.

Furthermore, the SiB437EDKT offers on resistances of 34 mΩ at 4.5 V, 63 mΩ at 1.8 V, 84 mΩ at 1.5 V, and 180 mΩ at 1.2 V. It is 100% Rg tested and halogen-free in accordance with the IEC 61249-2-21 definition and complies with the European Union’s Restrictions on Hazardous Substances (RoHS) Directive 2002/95/EC. It offers typical electrostatic discharge (ESD) protection of 2000 V as well.

Samples and production quantities are available now, with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery starts at $0.11 each in 100,000-piece quantities.

Vishay Intertechnology

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