Electronic Design

Trench-Type SiC MOSFET Reduces ON Resistance 50%

New SiC MOSFET, featuring a trench structure that maximizes SiC characteristics, achieves optimum performance by combining exceedingly low loss with high-speed switching performance.

ROHM is now mass-producing the industry’s first trench-type SiC MOSFET. Utilizing a proprietary trench structure, the process results in improved switching performance (approx. 35% lower input capacitance) and a reduction of ON resistance by 50% over planar-type SiC MOSFETs. The new SiC MOSFET, featuring a trench structure that maximizes SiC characteristics, achieves optimum performance by combining exceedingly low loss with high-speed switching performance. As a result, efficiency during power conversion is improved and waste eliminated during production, contributing to increased miniaturization, lighter weight, and greater energy savings in a variety of equipment, from industrial inverters and power supplies, to power conditioners for solar power systems.

Going forward, the company is developing full SiC modules that integrate both SiC MOSFETs and SBDs. A full SiC power module incorporates these latest trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs. The 1200 V / 180 A module features the same rated current as Si IGBT modules while reducing switching loss by approximately 42% vs. planar-type SiC MOSFETs. The lineup is being expanded to include 3 models for each rated voltage, 650 V and 1200 V, with rated currents of 118 A (650 V) and 95 A (1200 V).

ROHM SEMICONDUCTOR

TAGS: MOSFETs Power
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