Innovation in the world of power electronics comes from many sources, including new materials, more advanced power-supply topologies, optimized passive components, packaging, and cooling technologies. But some of the biggest impacts stem from the MOSFETs at the heart of it all.
In that context, leading players in the power semiconductor market are upping the ante with a new generation of power MOSFETs that are optimized inside-out for higher efficiency, faster switching rates, and superior heat dissipation. These power devices tap into innovations in everything from the internal structures to the packaging to help address the unique challenges in sectors ranging from data centers—which are under pressure from new power-hungry AI processors and GPUs—to industrial motor drives, solar inverters, and the electric vehicle.
The power electronics landscape is evolving. New materials—silicon carbide (SiC) and gallium nitride (GaN)—continue to raise the bar for power density and switching rates. SiC is rapidly transforming into the power semiconductor of choice for EV traction inverters and the renewable-energy market. GaN power FETs are the gold standard for fast charging of smartphones and laptops. But defeating the silicon MOSFET that has dominated for decades is a daunting task.
Here are some of the latest power MOSFETs to reach the market in recent months. The new offerings are a motley group, covering virtually any situation where you need to convert or distribute power fast and efficiently.
- The First 15-V Trench MOSFET in a PQFN Package
- 100-V Power FET is Cooled from Top to Bottom
- Up to 48-V Power MOSFETs Raise Bar for Resistance
- Auto-Grade Power FETs Go with Gull-Wing Packages
- 600-V Power MOSFET Adds Fast Recovery Body Diode
- High-Voltage MOSFET Spaces Out Pins for Power-Supply Isolation
- 12-V MOSFET Brings More Durable Packaging for Fast Charging
- 650-V MOSFET Fits Power Systems Packing Over 2 kW
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