Breakdown and Leakage Current Measurements

The shift to Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices is driving new designs from the ground up. These power devices are not drop-in replacements for their silicon counterparts, however.  Characterizing wafer and package-part level devices for electrical performance requires learning new techniques, equipment, and probing infrastructure for low level measurement.  This note considers the application of a new source measure unit instrument together with software for high voltage semiconductor device testing.