• Header 2 5f317d29e5eb9

    Technical Brief: Evolving Materials and Testing for Emerging Generations of Power Electronics Design

    Aug. 10, 2020
    Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching speed and energy efficiency.
    Tektronix R Web Rgb Full Color

    Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching speed and energy efficiency.

    Continue Reading

    Sponsored

    Need ultra-low power and high security in one chip? The STM32U3 series delivers 7x better battery life and built-in cryptography—perfect for industrial, medical, and consumer ...
    Looking to boost efficiency and cut system size? STPOWER SiC MOSFETs deliver ultra-low losses, high-temperature operation, and outstanding reliability—ideal for EVs, renewable...
    In this video learn about all things USB, including the physical USB connector standards, the ever-changing communication and power delivery standards, and more.
    A brief comparison of AMRs and AGVs and practical considerations for AMR integration into a facility.