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    Technical Brief: Evolving Materials and Testing for Emerging Generations of Power Electronics Design

    Aug. 10, 2020
    Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching speed and energy efficiency.
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    Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching speed and energy efficiency.

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