Rethink Power Density with GaN (.PDF Download)

    April 21, 2017
    The world of power electronics witnessed a breakthrough in 1959 when Dawon Kahng and Martin Atalla invented the metal-oxide-semiconductor

    The world of power electronics witnessed a breakthrough in 1959 when Dawon Kahng and Martin Atalla invented the metal-oxide-semiconductor field-effect transistor (MOSFET) transistor at Bell Labs. The first commercial MOSFET was released to production five years later. Since then, generations of MOSFET transistors have enabled power designers to achieve performance and density levels not possible with their bipolar predecessors...

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