The shift to Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices is driving new designs from the ground up. These power devices are not drop-in replacements for their silicon counterparts, however. Characterizing wafer and package-part level devices for electrical performance requires learning new techniques, equipment, and probing infrastructure for low level measurement. This note considers the application of a new source measure unit instrument together with software for high voltage semiconductor device testing.