Trench MOSFETs Exhibit Low On-Resistance

    Nov. 1, 2001
    Designed to minimize losses and boost circuit efficiency, five SOT23-6 trench MOSFETS exhibit very low on-resistance and low gate charge. As an example, the 20-V ZXMN-2A03E6 has an on resistance of 55 m½ for a gate drive of 4.5V and a continuous

    Designed to minimize losses and boost circuit efficiency, five SOT23-6 trench MOSFETS exhibit very low on-resistance and low gate charge. As an example, the 20-V ZXMN-2A03E6 has an on resistance of 55 m½ for a gate drive of 4.5V and a continuous drain current of 4.5A dc. Typical gate charge is 8.6 nC. The 30V ZXMN-3A03E6 provides an on-resistance of 50 m½ for a gate drive of 10V and a gate charge of 12.6 nC. Price for either the 20V or 30V device is $0.33 each/1,000. For further information, call Neil Chadderton at ZETEX INC., Hauppauge, NY. (631) 360-2222.

    Company: ZETEX, INC.

    Product URL: Click here for more information

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