Using a very small GaAs heterojunction bipolar transistor (HBT), the BA01212 power amplifier module comes in a package developed to drive down the cost, weight and size of mobile phones. The module is housed in an LTCC substrate package that measures 6 x 6 x 1.5 mm with a metal cap. The transistor's structure is optimized for size to fit the package and circuit configuration. Operating voltage is 3.5V and idle current is 50 mA. In addition to its small size, the module eliminates the need for peripheral circuitry and a negative voltage supply. Matching circuits that reduce distortion are on-chip, giving further cost and space saving benefits. In sample quantities, BA01212 is priced at $8.60. For more details, call John Garner. MITSUBISHI ELECTRIC AND ELECTRONICS USA, INC., Sunnyvale, CA. (408) 774-3191.
Company: MITSUBISHI ELECTRIC AND ELECTRONICS USA, INC.
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