Offering excellent medium power performance, the NE722S01 GaAs MESFET is said to be ideal for use as an oscillator in digital LNBs, as well as second and third stage amplifiers in receiver designs from the C to X band. The FET features an 0.8-µm recessed gate and triple epitaxial technology and is fabed using ion implantation techniques to achieve improved RF and dc performance. And it has a power gain of 6 dB at 12 GHz. output power of 15 dB at 12 GHz and 1 dB of compression, a noise figure of 0.9dB at 4 GHz, and a gain of 12 dB at 4 GHz. The MESFET comes in a S01 SMT package priced at $0.99 each/100K. CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.
Company: CALIFORNIA EASTERN LABORATORIES
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