Power MOSFETs Improve Specs

April 6, 2004
Enlisting second-generation TrenchFET technology, the 30V n-channel Si4320DY and Si7356DP power MOSFETs are based on a 300-million-cells per square inch platform that yields an on-resistance of 12 m?/mm². This is said to yield a 30% improvement

Enlisting second-generation TrenchFET technology, the 30V n-channel Si4320DY and Si7356DP power MOSFETs are based on a 300-million-cells per square inch platform that yields an on-resistance of 12 m?/mm². This is said to yield a 30% improvement over the company's previous generation devices. Of note, the Si4320DY in a Little Foot SO-8 and the Si7356DP in a PowerPAK SO-8 package exhibit on-resistances of 3 m? at 10V and 4 m? at 4.5V. Prices start at $0.58 each/100,000. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (610) 644-1300.

Company: VISHAY INTERTECHNOLOGY INC.

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