MESFET Boasts 13-dB Gain At 2 GHz
The CRF-24010, a Class A/B 10-W silicon-carbide (SiC) MESFET, promises a minimum gain of 13 dB at 2 GHz, which is greater than 3 dB higher than previous SiC MESFETs. The device has a third-order intermodulation of −31 dBc at a peak envelope...