Bipolar RF Transistors Offer 25-GHz Transition Frequency

July 22, 2002
Two new silicon npn planar RF transistors can serve as RF front ends for analog and digital wireless communication systems up to 3 GHz. The TSDF2005W and TSDF2020W feature a 25-GHz transition frequency and excellent dynamic performance. They also...

Two new silicon npn planar RF transistors can serve as RF front ends for analog and digital wireless communication systems up to 3 GHz. The TSDF2005W and TSDF2020W feature a 25-GHz transition frequency and excellent dynamic performance. They also boast noise figures of 1.2 and 1.1 dB and power gain values of 21 dB and 20 dB, respectively.

The 5-mA TSDF2005W and 20-mA TSDF2020W offer collector-base capacitances of 0.05 pF and 0.15 pF. Both devices feature a typical transducer gain of 17 dB and low feedback capacitance. The devices' compact plastic surface-mount SOT343 package measures 2.05 by 1.25 mm with a 1.0-mm high profile. Emitter pins serve also as thermal leads.

Each transistor is rated for a collector-base voltage of 10 V, a collector-emitter voltage of 3.5 V, and an emitter base voltage of 1.5 V. The TSDF2005W has a collector current of 12 mA and total power dissipation of 40 mW at an ambient temperature of less than 132°C. The TSDF2020W's collector current is 40 mA and maximum total power dissipation is 200 mW at an ambient temperature of less than 60°C.

Pricing for both transistors starts at $12.00 per 100 pieces for quantities of 100,000.

Vishay
www.vishay.com; (203) 445-5501

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