Power MOSFETs Raze On Resistance Down To 1.6 MilliOhms

Poised for deployment in fixed telecom networks and OR-ing applications, the company's latest TrenchFET Gen II power MOSFETs claim best-in-class on-resistance performance and provide a choice of three package options. The three n-channel MOSFETs feature 20-V drain-to-source and gate-to-source voltage ratings and offer on-resistance specifications as low as 1.6 milliOhms. The Si4398DY specifies an on resistance of 2.8 milliOhms at 10V, and, for low-voltage power supplies, the Si4398DY specifies 1.6 milliOhms in the SO-8 package. Promising optimal heat dissipation in still-air environments, the Si7866ADP comes in a thermally enhanced PowerPAK SO-8 package and specifies a maximum on-resistance of 2.4 milliOhms at 10V. Maximum junction-to-case thermal resistance is 1.5 °C/W. Pricing for the three devices starts at $0.75 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.