SiGe Transistors Achieve Low Noise Figure

March 1, 2003
The company's latest SiGe transistors achieve what is claimed as the industry's lowest noise figure and performance levels comparable to more expensive GaAs devices. With a VCEO of 3V, the ultra-low noise type transistor provides a noise figure of

The company's latest SiGe transistors achieve what is claimed as the industry's lowest noise figure and performance levels comparable to more expensive GaAs devices. With a VCEO of 3V, the ultra-low noise type transistor provides a noise figure of 0.52 dB operating at 2V/10 mA/2 GHz. The ultra-high frequency type provides a noise figure of 0.62 dB when operating at 2V/5 mA/2 GHz and 1.16 dB when operating at 2V/5 mA/5.2 GHz. With applications in GPS and WLANs, the transistors come in a four-pin TESQ package measuring 1.2 mm x 1.2 mm x 0.52 mm. With production volumes scheduled for September, samples of the new transistors are available now priced at $0.42 each. For further information, contact TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (800) 879-4963.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC.

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!