Power MOSFETs Debut Unique Thermal Package

Oct. 8, 2008
The 30V N-channel SiE802DF and SiE800DF power MOSFETs are the first to employ the company's PolarPAK package, which uses double-sided cooling to reduce thermal resistance as well as package resistance and inductance. Capable of handling current levels

The 30V N-channel SiE802DF and SiE800DF power MOSFETs are the first to employ the company's PolarPAK package, which uses double-sided cooling to reduce thermal resistance as well as package resistance and inductance. Capable of handling current levels up to 60A, the SiE802DF supports the low-side control switch in synchronous-rectification dc/dc converters. The device exhibits a maximum on-resistance of 1.9 mO with a 10V gate drive and 2.6 mO at 4.5V. The other component, the SiE800DF, is tailored to work as the low-duty-cycle, high-side MOSFET in synchronous dc/dc converter designs. It specifies a typical gate charge of 12 nC and maximum on-resistances of 7.2 mO at 10V and 11.5 mO at 4.5V. Both devices measure 5 mm x 6 mm. Prices for the SiE802DF and SiE800DF are $1 and $0.80 each/10,000, respectively. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (619) 336-0860.

Company: VISHAY INTERTECHNOLOGY INC.

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