Power MOSFETs Offer Low On-Resistance

Aug. 1, 1998
With an on-resistance of only 7 milliohms for the n-channel SUD50N03-07 and 10 milliohms for the p-channel SUD45P03-10, these TrenchFETs are said to handle about one-third more current than previous generation MOSFETs while affording designers the

With an on-resistance of only 7 milliohms for the n-channel SUD50N03-07 and 10 milliohms for the p-channel SUD45P03-10, these TrenchFETs are said to handle about one-third more current than previous generation MOSFETs while affording designers the same thermal design rules. For example, the devices let designers use next-generation µPs requiring higher current without making any other changes to circuits. The TrenchFETs give designers more muscle when compared with SO-8 devices that handle a maximum of 10A to 12.5A. With a small increase in footprint, maximum usable current for these DPAK devices is 20A for n-channel and 15A for the p-channel devices.

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