Now in volume production, the NPTB00004 28V/5W high electron mobility transistor (HEMT) targets wireless infrastructure, broadband, and military markets. Employing the company's patented SIGANTIC NRF1 process, the device achieves 250 mW of average
Now in volume production, the NPTB00004 28V/5W high electron mobility transistor (HEMT) targets wireless infrastructure, broadband, and military markets. Employing the company's patented SIGANTIC NRF1 process, the device achieves 250 mW of average output power at 1% EVM in 3.5-GHz WiMAX systems. The NPTB00004 transistors come in plastic over-molded SOIC-8 packages with an exposed thermal pad. Samples and application boards are also available. Typical pricing is $9 each each/1,000 with delivery from stock to 10 weeks. NITRONEX CORP., Durham, NC. (919) 807-9100.
