Power MOSFET With Schottky Breaks Footprint Barriers

Logging in as the industry’s smallest 20V n-channel power MOSFET with an integrated Schottky diode, the SiB800EDK resides in a thermally-enhanced PowerPAK SC-75 package measuring 1.6 mm x 1.6 mm. The device’s Schottky diode operates with a forward voltage of 0.32V at 100 mA. MOSFET on resistance is 0.96 Ohm at a gate drive of 1.5V and 0.225 Ohm at 4.5V. Typical applications include level shift switching in I2C interfaces and boost converters in portable products. Other features of the SiB800EDK include ESD protection and RoHS-compliance. Pricing starts at $0.17 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.