Power MOSFET Pair Runs On Low Gate-Charge
A pair of N-channel power MOSFETs, the Si4368DY and Si7668DP, combine low gate-charge specifications (Qgd) with small values of on-resistance (rDS(ON)) to provide a very low Figure-of-Merit (Qgd x rDS(ON)) of 23 m?nC for power switching devices. This