Power FETs Extend Performance In 48V Systems

When deployed on the primary side of a 48V bus converter circuit, the IRF7493 80V and IRF7495 100V, n-channel HEXFET power MOSFETs exploit a trench design that is said to lower on-resistance and enhance gate-charge performance. As a result, the devices report lower junction temperatures by 10°C. The IRF7493 specifies an on-resistance of 15 m? and IRF7495, 22 m?. Optimized for full- and half-bridge configurations in 36V to 60V ETSI systems, the IRF7493 is part of the company's dc bus converter chipset for isolated, two-stage distributed-power architectures. The IRF7495 targets telecomm systems employing input voltages from 36V to 75V. Additionally, both devices promise to reduce overall power loss in 150W ORing applications by as much as 90%. Price for either device is $0.57 each/10K. For more details, call Wayne Yoshida at INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 252-7726.