60-V Power MOSFET In SO-8 Sports 6.1-milliohm On-Resistance

With on-resistance of just 6.1 milliohm at a 10-V gate drive, the SiE876DF offers a 13% gain over the next best comparable device on the market, it’s claimed. Further, the device is said to be the first 60-V power MOSFET with an on-resistance this low in a package with double-sided cooling. The N-channel SiE876DF is targeted at industrial-type power supplies, motor-control circuits, AC/DC power supplies for servers and routers, and systems using point-of-load (POL) power conversion. It will also be used as a primary side switch or for secondary side rectification in higher voltage intermediate bus conversion (IBC) designs. In each of these applications, the low on-resistance of the SiE876DF will translate into lower conduction losses and thus save on energy. Also, the double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature. Samples and production quantities of the SiE876DF 60-V are available now, with lead times of 10 to 12 weeks for larger orders. Pricing in quantities of 100,000 starts at $0.96 each. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (605) 665-9301.