200V MOSFET Achieves 95% Efficiency

Oct. 8, 2008
Pairing DirectFET packaging and 200V HEXFET MOSFET silicon technologies, the 200V IRF6641TRPBF power MOSFET is capable of efficiencies up to 95%. Groomed for use in isolated dc/dc converter designs operating from a universal input range, the device

Pairing DirectFET packaging and 200V HEXFET MOSFET silicon technologies, the 200V IRF6641TRPBF power MOSFET is capable of efficiencies up to 95%. Groomed for use in isolated dc/dc converter designs operating from a universal input range, the device presents a typical on resistance of 51 mΩ at 10V, 59.9 mΩ maximum. It has a common MZ footprint, providing a migration path to other mid-voltage DirectFET MOSFETs such as the lower-voltage, 100V IRF6662. Additionally, the MOSFET is RoHS compliant. Pricing is $1.24 each/10,000. INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 252-7726.

Company: INTERNATIONAL RECTIFIER

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!