BCD Process Unveils Devices That Lower Die Cost And Size

Two new devices have been qualified on 6-in. wafers for the PBC4 0.5-µm biCMOS-DMOS (BCD) process. The first is a high-power driver. The n-channel medium voltage DMOS large-angle-body (MDL) device features a specific on-resistance (R_SP) of 25 Ω mm², a 1.3-µm gate length, a 2.0-V V_T, and a 13.2-V V_MAX. The second device is a platinum Schottky diode. For pricing, contact the company.