Logic-Level Trench MOSFETs Deliver Benchmark Efficiency

May 1, 2009
International Rectifier has announced a range of logic-level gate drive trench HEXFET power MOSFETs that provide benchmark on-state resistance and a high package current rating for high-power dc motors and power tools, industrial batteries, and power-supp

International Rectifier has announced a range of logic-level gate drive trench HEXFET power MOSFETs that provide benchmark on-state resistance (RDS(ON)) and a high package current rating for high-power dc motors and power tools, industrial batteries, and power-supply applications, according to the company.

These devices provide a 4.5-V VGS RDS(ON), significantly improving thermal efficiency, IR says. Their package current rating ranges up to 195 A, enabling the TO-220, D2PAK, and TO-262 packages to deliver more than 60% improvement over typical package ratings, while the seven-lead D2PAK further reduces RDS(ON) by as much as 16%, the company says.

These MOSFETs can be driven from a microcontroller or weak battery to deliver improved efficiency at light load conditions, suiting them for high-current dc-dc switching and dc motor drive applications, according to IR. They provide a voltage range of 40 to 100 V as well.

Qualified to industrial grade and moisture sensitivity level 1 (MSL1), they’re available in all standard power packages. They’re also offered lead-free and comply with the European Union’s Restrictions on Hazardous Substances (RoHS). Pricing begins at $1.26 for the IRLB3034PBF, $1.29 for the IRLB3036PBF, and $1.33 for the IRLB4030PBF, each in 10,000-unit quantities. Pricing is subject to change.

International Rectifier

www.irf.com

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