Bipolar Transistors Feature Ultra-Miniature, Leadless Design

May 1, 2000
Claimed to be the smallest silicon bipolar transistors yet developed, these new NPN transistors come in a new, ultra-miniature M23 package measuring just 1 mm x 0.6 mm x 0.55 mm high. Employing a unique, "leadless" design and a low-cost ceramic

Claimed to be the smallest silicon bipolar transistors yet developed, these new NPN transistors come in a new, ultra-miniature M23 package measuring just 1 mm x 0.6 mm x 0.55 mm high. Employing a unique, "leadless" design and a low-cost ceramic substrate, the transistors are said to be ideal for VCOs, pagers and other wireless handheld designs and can be configured as oscillators, LNAs, and buffer amplifiers. Four devices-- the NE681M23, NE685M23, NE687M23 and NE688M23-- have a fT of 7, 12, 5.5 and 5 GHz, respectively. Depending on model, IC max. ranges from 30 to 100 mA and noise factors are between 1.4 and 1.9 dB at 1 to 2 GHz. Available on tape-and-reel, the devices cost $0.34 each/100,000.

Company: CALIFORNIA EASTERN LABORATORIES

Product URL: Click here for more information

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