20-GHz Transistor Suits VCO Designs

Optimized for use in 3- to 4-GHz VCO modules, the NE894M13 npn, silicon transistor delivers 20-GHz fT performance and is said to be especially effective at 3.6 GHz. A single VCO using the transistor can be used with frequency division to generate both 1.8 GHz and 900 MHz signals. Other features include a voltage/current rating of 1V at 10 mA typical, a noise figure of 1.4 dB typical at 2 GHz (1V at 10 mA), and an associated gain of 13 dB typical at 2 GHz (1V at 10 mA). For further information and prices, call Joe Grimm at CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.