LDMOS FET Supports Variety Of Communications Bands
Operating with frequencies from UHF to 2.5 GHz, the NE552R479A n-channel, LDMOS FET does not require a negative power supply voltage and supports battery voltages from 3V to 8V. Suitable applications include the transmitter output stage in cell
Operating with frequencies from UHF to 2.5 GHz, the NE552R479A n-channel, LDMOS FET does not require a negative power supply voltage and supports battery voltages from 3V to 8V. Suitable applications include the transmitter output stage in cell phones, two-way radios, wireless LANs, and fixed wireless transceivers. Measured at 2.44 GHz at 5V, POUT= +27 dBm, GL= 11.5 dB, and output IP3= +36 dBm. The FET, manufactured using 0.6 µm WSi gate NEWMOS technology, comes in a surface-mount package measuring 5.7 mm x 5.7 mm x 0.9 mm with a thermal resistance of 10°C/W maximum. Price is $2 each/10,000. CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.
