Power MOSFETs Break 4-milliohm Barrier

Oct. 8, 2008
Employing second-generation TrenchFET technology, the 30V, n-channel Si4320DY and Si7356DP specify on-resistances of 4 milliohms at 4.5V and 3 milliohms at 10V. These values are reportedly 17% and 14% lower, respectively, than comparable devices. The

Employing second-generation TrenchFET technology, the 30V, n-channel Si4320DY and Si7356DP specify on-resistances of 4 milliohms at 4.5V and 3 milliohms at 10V. These values are reportedly 17% and 14% lower, respectively, than comparable devices. The devices exhibit a high threshold voltage and a Qgd/Qgs ratio of 0.8 to provide shoot-through protection and increase efficiency. Samples and production quantities of are available now with lead times of four to six weeks for larger quantities. Pricing starts at $0.58 each/100,000. VISHAY SILICONIX, Santa Clara, CA. (619) 336-0860

Company: VISHAY SILICONIX

Product URL: Click here for more information

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